Recently, the silicon carbide industry has shown a thriving development trend. As a representative material of third-generation semiconductors, silicon carbide has been widely used in various fields due to its excellent performance.

In the field of new energy vehicles, the demand for silicon carbide power devices continues to grow. Multiple car companies have adopted silicon carbide technology to enhance the performance and range of electric vehicles. For example, Tesla was the first to use silicon carbide in its models, setting a benchmark for the industry. Domestic car companies such as BYD and GAC Aion are also actively following up and promoting the application of silicon carbide in the new energy vehicle market.

At the same time, silicon carbide has shown great potential in fields such as photovoltaics, energy storage, and industrial control. Its high conversion efficiency and resistance to high temperatures and pressures enable related equipment to operate more efficiently and stably.

Domestic silicon carbide industry chain manufacturers actively layout and continuously make new progress. The person in charge of Sanan Optoelectronics revealed that the Chongqing Sanan project (an 8-inch silicon carbide substrate supporting factory) has achieved the lighting and wiring of the substrate factory; The advanced 8-inch conductive product from Tianyue, a silicon carbide substrate manufacturer, has been scaled up and entered the mass production stage, with continuous product delivery. In addition, the first batch of 8-inch silicon carbide long crystal equipment from Jingsheng Co., Ltd. was delivered in Chongqing in July this year; Yujing Co., Ltd. is currently selling 8-inch silicon carbide substrate cutting and polishing equipment in the market.

Market analysis suggests that based on cost reduction and a long-term perspective, 8-inch wafers will help achieve large-scale commercialization of silicon carbide devices in more application areas, driving the silicon carbide market into a new stage of development. However, there are still obstacles to the advancement of silicon carbide products at present. Although domestic silicon carbide substrates and epitaxial products have basically achieved localization, there is still room for improvement in yield and cost control compared to international enterprises. At the same time, there is a significant release of domestic silicon carbide production capacity, which poses a risk of oversupply.

Despite facing challenges, the development prospects of the silicon carbide industry remain broad with continuous technological breakthroughs and cost reductions. In the future, silicon carbide is expected to play an important role in more fields and contribute to the development of China's semiconductor industry.